Erbium-Doped Silicon. New Semiconductor Material for Nonlinear Optics.
Research & Development of Diamond Detector Technology.
Development of Multichannel Infrared Equipment and Methods for Detection of Information Signals of Biologically Active Points of Human Body. Study of Properties of these Signals
Fabrication of Porous Silicon Based Photodetectors for Visible and UV Ranges and Study of their Properties
Control of the Stressful Emotional Tension in Humans on the Basis of Heart rate Variability as a New Approach to Provide the High Quality of Human Life
Research and Development of Single Crystal Synthetic Diamond Technologies and Devices
IR Camera-Based New Approach for Characterization of Semiconductor Materials and Devices
Light Emitting Rare Earth Doped Si-based Structures for Optoelectronics
Development of the Technology for Fabrication of Porous Silicon on Insulating Substrate Applicable for Uncooled Microbolometer IR Photodetectors
Research and Development of High-Sensitive Semiconductor Gas Sensors and Ionizing-Radiation Detectors for Environment Monitoring
Advanced “Semiconductor-Dielectric” Fianite-Based Structures for Optoelectronic Devices of New Generation
Fabrication of Ultraviolet TiO2 Photodiodes and Study of their Properties