Development of Silicon Carbide Semiconducting Material for a new Generation of Radiation Hardened and High Temperature Sensors and Electronics.
Development of Silicon Carbide for Power Field-Effect Transistors and Other Radiation-Hardened Electronics
Ferroelectric Film Structures for Application in Radioelectronic Devices
Miniature Tunable Microwave Oscillators Based on Acoustic and Spin-Wave Frequency Selective Elements
Planar Layered Structures Based on Ferroelectric Films Intended for Applications in Radioelectronic Tunable Devices of Millimeter Wavelength Band
Metalloxide layered structures including ferromagnetic and superconducting films for tunable microwave electronic devices