Gateway for:

Member Countries

Technologies for Micro- and Nanoelectronics

#2772


Research and Development of Competitive Materials, Technologies and the Equipment for Creation of Micro- and Nanoelectron Devices of New Generation

Tech Area / Field

  • INF-ELE/Microelectronics and Optoelectronics/Information and Communications
  • MAT-SYN/Materials Synthesis and Processing/Materials

Status
3 Approved without Funding

Registration date
16.05.2003

Leading Institute
Russian Academy of Sciences / Institute of Radioengineering and Electronics / Saratov Branch (SB IRE RAS), Russia, Saratov reg., Saratov

Supporting institutes

  • Saratov State University / Scientific Research Institute of Mechanics and Physics, Russia, Saratov reg., Saratov

Collaborators

  • LG. Philips Displays Blackburn, UK, Blackburn\nUniversity of Surrey / School of Electronics and Physical Sciences, UK, Guildford\nStellar Display Corporation, USA, TX, Austin

Project summary

The purpose of the project is development of competitive materials, technologies and the equipment for creation micro- and nanoelectron devices of new generation including flat information screens, equipment and devices of emissive vacuum microelectronics, etc., intended for operation in conditions of high temperatures and ionizing radiation's.

The central problem in creation of element base of emissive electronics is creation of reliable and durable autoelectronic cathode (FEC). Attempts of creation effective FEC are undertaken already during lines of years. However till now this problem and has not found the decision.

The creation of new competitive materials goes on a way of increase of their stability to degradation under action of various external radiating influences and temperatures. Application of widegap semiconductors, dielectrics and heterostructures on their basis is perspective and raises functionalities of devices. However pure dielectrics are not radiation resistant It essentially narrows area of their application.

The problem of monitoring of radiating stability semiconductor films and structures, formulated in 60th years, and now is still far from the decision.

Difficulties of creation of new materials in many respects are caused by absence of corresponding technologies and the equipment with which help modern representations on their creation could be realized. Development of effective methods of monitoring by process of their synthesis for reproduced creation of new materials with the predetermined functional properties is not less important. For these reasons the modern process equipment should be cluster and equipped by methods of monitoring and control of synthesized material properties directly during process of its formation.

In connection with stated the theme of the project is actual. Technologies and materials developed within the framework of the project will allow to create element base, and also equipment and devices of new generation with higher characteristics and wider scopes in conditions of influence of high temperatures and ionizing radiation's, essentially increase economic efficiency of their production. The suggested decisions can give a quantum leap in development of optoelectronics, information techniques and vacuum microelectronics.

Institutes–performers of the project are the leading organizations in Russia on development vacuum – plasma technological processes of microelectronics, including formation of carbon nano cluster structures of various allotropic modifications, to monitoring of technological processes of synthesis of new materials with use of methods and means of the intramodular control. These developments anticipated foreign ones a some years on a series of directions.

Expected results of the project are development of modeling representations on increase degradation stability and creation of new highly effective materials with the predetermined physical properties; development of the multi-purpose technological module with means of the control and monitoring in parameters of materials during their formation, and also technological processes of creation of topological structures of flat information screens on the basis of autoemissive cathodes.

Potential consumers of materials technologies and the equipment developed within the framework of the project, is the broad audience of the industrial, scientifically research organizations which are carrying out studying, operation and development of technological processes for creation of devices of electronic techniques of new generation.

The developed new materials, the equipment and technologies can be used also in solid-state micro-, and nanooptoelectronics.

Implementation of the project answers purposes of ISTC. It will give an opportunity to the scientists and experts connected to the weapon for reorientation of a sort of activity and realization of the of experience and knowledge in scientifically - to research activity in the peace purposes, promotes the decision of national and international technical problems, including, in the field of nuclear safety, energy saving and protection of an environment.

The amount of works of the project includes implementation of five interconnected problems:

1. Research and development low-temperature vacuum-plasma technological processes of creation of new highly effective emissive materials and structures on the basis of carbon.

2. Research and development of physical model and technology of formation radiate proof film structures on the basis of carbon and cadmium and lead chalcogenides for micro-, nano- and optoelectronics.

3. Creation of the multi-purpose technological module cluster systems on basis nonelectrode microwave plasma in a magnetic field.

4. Development and creation of methods and means of diagnostics and monitoring of plasma process and multiparameter complex intramodular control of physical properties of structures on the base of carbon, silicon, etc. during their formation.

5. Development of the vacuum plasma technological processes of deposition and dry etching with regulation by regime means by selectivity and anisotropy in plasma of the microwave gas discharge of various film materials with the purpose of creation of topological structures supersubmicron resolution and flat information screens and devices of emissive vacuum electronics on the basis of autoemissive cathodes.

Foreign collaborators will take part in the incorporated discussion of the current results of project implementation and definition of new problems for researches, representation of comments to annual technical reports, and also in tests and an estimation of the equipment (of the technologies developed during project).

Technical approaches and methodology of implementation of work will consist in the following.

Creation of new emissive materials will be based on development heterophase, single and layered nano crystalline structures on the basis of various allotropic phases of carbon, silicon and their compounds (graphite - diamond - tubelens, graphite - carbide silicon, etc.).

Development of model degradation stability and new degradation proof carbon materials bases on the models of the heterophase mechanism of radiating stability entered by authors of the project. It is expected that this mechanism developed by the example of compounds АIIВIVIVВVI, renders the essential help in understanding anti degradation processes in carbon films.

Creation of new technologies and the multi-purpose module cluster systems are based on application of low energy and high ionization plasmas of the microwave gas discharge with an electronic cyclotron resonance. It possesses doubtless advantages as from the point of view of satisfaction to the most rigid requirements of microelectronic production, and from the point of view of variety of sold technological processes.

Development of techniques, algorithms and program – hardware multiparameters the control and monitoring of process and properties of materials and structures at various stages of their synthesis are based on microwave probe of plasmachemical environments by measurement of a phase of the reflected waves and their dispersion, and also solid-state probe of properties of structure with use ellipsometry, reflectometry, one-wave and spectral interferometry.

It is planned to carry out development of technological processes of creation of topological structures as for typical design of the matrix autoemissive cathode with traditional, having vertical concerning a plane of a film selection of an emissive current, and for cathodes in which tips in the form of micro-, nano thin blades are focused to in parallel carrying substrate. All layers such FES can be deposition in a uniform vacuum cycle and by one microwave plasmachemical technology. This is the main reason of high technology adaptability of such design.


Back

The International Science and Technology Center (ISTC) is an intergovernmental organization connecting scientists from Kazakhstan, Armenia, Tajikistan, Kyrgyzstan, and Georgia with their peers and research organizations in the EU, Japan, Republic of Korea, Norway and the United States.

 

ISTC facilitates international science projects and assists the global scientific and business community to source and engage with CIS and Georgian institutes that develop or possess an excellence of scientific know-how.

Promotional Material

Значимы проект

See ISTC's new Promotional video view