Development of Physical Principles and Creation of Active Elements of Semiconducting Spintronics Based on Magnetic Nanostructures
Tech Area / Field
- PHY-SSP/Solid State Physics/Physics
- INF-ELE/Microelectronics and Optoelectronics/Information and Communications
3 Approved without Funding
Kurchatov Research Center, Russia, Moscow
- MGTU (Moscow State Technical University), Russia, Moscow
- University of British Columbia / TRIUMF, Canada, BC, Vancouver\nTexas Tech University / Department of Physics, USA, TX, Lubbock\nScience and Technology Facilities Council, UK, Didcot
Project summaryThe aim of the current project is studies of magnetic structure and spin transport processes in magnetic semiconductors and creation of spintronics active elements based on spin transport (transistors, spin valves, diodes, elements of magnetooptics nanodevices), controlled by magnetic and electric fields. Including:
- Studies of magnetic structure of diluted magnetic semiconductors (DMS) based on II-VI (CdMnTe, CdMnSe, etc.) and III-V (GaMnAs, InMnAs, etc).
- Studies of charge and spin transport, and their dependence of magnetic and electric fields in crystals, films and multilayer nanostructures of magnetic semiconductors (Eu chalcogenides) and DMS based on II-VI and III-V
- Development of operation principles of spintronics devices based on spin-dependent transport
- Mathematical modeling and making of devices prototypes based on transport processes in ferromagnetic semiconductors.
To date, both the nature of ferromagnetism and the nature of spin-dependent transport in these semiconductors are subjects of significant debate. Existing theories have certain drawbacks caused first of all by lack of experimental data on magnetic field distribution in microscopic scale.
Solving these problems will significantly increase potential capabilities of spintronics as well of fields of its application. Applied aspect of the problem under study is rather vital as it leads to development of a new class of spintronics and traditional microelectronics devices.
Our group is the first in the world who looked on the problem from this point of view. The current project group consists of scientists of RRC “Kurchatov Institute” and Bauman MSTU having extensive experience in studies of physical properties of solids, and in development of new equipment and devices. Earlier these scientists took part in military programs aimed at creation of new types of weapon, dealing with development of materials and equipment for military techniques.
Work on project will lead to creation of research and technical links and development of cooperation and integration of weapon scientists and engineers into civil R&D programs. Total project effort for three years is 6180 persons*days, including 3960 (~64%) persons*days for weapon scientists and engineers.
Significant part of the project is planned to be performed in direct collaboration with foreign colleagues, in particular, muon studies of magnetic and transport properties in joint experiments of RRC “Kurchatov Institute” and Texas Tech University (Lubbock, Texas, USA) on accelerators of muon centers at TRIUMF (Vancouver, Canada), PSI (Zurich, Switzerland) and Rutherford Laboratory (Oxford, UK).
As one of the main techniques we suggest recently developed technique of electron mobility measurement in microscopic scale by muon spin relaxation method in electric field in combination with traditional carrier transport measurement techniques (magnetoresistance, Hall effect, thermopower). The magnetic structure of magnetic semiconductors will be measured by muon spin relaxation techniques as well as NMR and ESR. Traditional magnetometry techniques – SQUID and vibrational magnetometer - will be used for sample characterization along with X-ray phase and structure studies including those with synchrotrone radiation, as well as determination of chemical composition of the samples with Auger and mass spectroscopies.
The results of current project will be presented as reports, publications and prototype devices. The main outcome of the project should be development of a new class of devices based on spin-dependent carriers transport.
Application: spin transistors and diodes, thin-film heterostructures – magnetoresistive sensors in memory devices and other spintronics devices.