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Optimization of Monosilicon Production


Creation of the Serial Automated Installation for Growing Silicon Monocrystals 150 - 200 mm in Diameter by Chohralsky Method

Tech Area / Field

  • MAT-SYN/Materials Synthesis and Processing/Materials

3 Approved without Funding

Registration date

Leading Institute
Krasnoyarsk Machine Building Plant, Russia, Krasnoyarsk reg., Krasnoyarsk-26

Project summary

The main project purpose: elaboration and investigation of algorithms for control technological process of growing massive silicon monocrystals with Chohralsky method to optimize constructive schemes of highly productive growing installations for monosilicon production".

Expecting results:

As a result of the Project realization the industry of semiconductor silicon will receive highly productive automated installation producing massive silicon monocrystals meeting modern requirements in size and quality, and defence enterprises will have the opportunity to utilize modern technologies for modern products production having functions.

Workload of only the head enterprise-manufacturer will come to approximately 65...70 thousand work quota hours for one complement.


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ISTC facilitates international science projects and assists the global scientific and business community to source and engage with CIS and Georgian institutes that develop or possess an excellence of scientific know-how.

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