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Optoelectronic Elements for Supercomputer

#0316


Optoelectronic elements and Devices Development for Optoelectronic Supercomputer Design Using New Fundamental Principles

Tech Area / Field

  • INF-ELE/Microelectronics and Optoelectronics/Information and Communications

Status
3 Approved without Funding

Registration date
03.01.1995

Leading Institute
NIIMN Delta, Russia, Moscow

Supporting institutes

  • Institute of High-Performance Computer Systems, Russia, Moscow

Project summary

The aim of this Project is to introduce new optoelectronic elements and devices into architecture of discrete computing system especially into the architecture of super-computer (Russian Academy of Sciences, Computer Center of Collective Use, Preprint #23, 1991).

Analisys of computers shows that new future executive units (+; *; /; ^;etc.) based on optical methods will not be competitive with semiconductor units in energy parameters, size, producing technology and cost. However,introducing optoelectronics methods it should be taken into account that:

- the architecture of modern supercomputers mainly consists of units providing the organization of computing process.such as managing blocks,hierarchy memories, commutators etc., and at the same time the executive units are no more than 10% of the whole supercomputer;

- it is possible to achieve the needed productivity of supercomputer of 1011 and more operations per second only with the use of new, non-von Neiman principle of organization of computing process providing the maximum computing in parallel;

- the new architecture principle of supercomputer needs wide bandwidth commutators and large volume associative memory units;

- modern technology allows to combine optical and semiconductor methods of infor-mation processing in one device.

Taking into account these facts the aim of this project is design and manufactu-ring of new optoelectronic elements and devices for the supercomputer architecture:

- high speed passive and active commutative units on the base of multisectional semi-conductor laser elements and electrooptical effect in waveguide lithium niobate structures;

- super high speed Fourier processor and correlator;

- matrix to vector timing device for the associative memory unit.

The project duration is three years and at the end of this period the final report and certain laboratory optoelectronic elements and devices will be presented, and in the combination with electronic computer the high speed of calculations will be demonstrated.


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