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Boron Sensors

#G-1765


Novel Boron Based Semiconductor Temperature Sensors for Nuclear Radiation Environment

Tech Area / Field

  • PHY-SSP/Solid State Physics/Physics
  • FIR-INS/Nuclear Instrumentation/Fission Reactors
  • FIR-ISO/Isotopes/Fission Reactors
  • INF-SIG/Sensors and Signal Processing/Information and Communications
  • INF-SOF/Software/Information and Communications

Status
3 Approved without Funding

Registration date
11.08.2009

Leading Institute
Georgian Technical University, Georgia, Tbilisi

Collaborators

  • University of Florida / Laboratory for Development of Advanced Nuclear Fuels and Materials, USA, FL, Gainesville\nUniversity of Tokyo / Graduate School of Frontier Sciences, Japan, Tokyo

Project summary

Among the so called “high temperature semiconductor materials” boron and its compounds demonstrate good physical and chemical features as the sensitive elements for temperature sensors. They are semiconductor materials (mainly boron, boron carbide and aluminum boride) with a high melting point, mechanical/ chemical strength in corrosive media and strong atomic bonds providing high stability in the radiation area. To raise its radiation resistance under neutron irradiation, boron should be enriched with B isotope.

At the same time isotope 10B is one of the most preferable neutron absorbing material in terms of efficiency in neutrons' intermediate and fast power spectra. It is distinguished by an optimal absorbing capability and heat-physical and physical-mechanical characteristics from the standpoint of their usability as neutron absorbing element.

Boron (and its compounds) crystalline and compact pellets are preparing by vacuum synthesis, free crystallization and vacuum hot pressing methods. Boron films and coatings should be also prepared by vapor deposition methods.

Preliminary studies of their properties such as the temperature resistance, voltage-current characteristics, ice melting point sensitive response, structural stability, etc. showed a high temperature resistance coefficient and in general linearity of voltage-current parameters within their operational range. We can conclude that boron and its compounds in principle are prospective materials for the sensitive elements of temperature sensors.

The aim of the project is development of Boron based novel nano sensory elements for temperature and neutron fluxes sensors working in the harsh environment (corrosive media, nuclear radiation, etc.).

The project has also a great importance for supporting, preservation and training the specialists working in the field of technique and technology of sensory systems preparation as well as measurement technique for the harsh environment application.

Project Facilities:

Laboratory rooms of the Technical University of Georgia (TUG) Institute of Applied Physics (IAP); testing stand; measuring and scanning tools; nanostructures technology vapor deposition plasma and laser machines, x-ray and electron microscope instruments, etc.

Project Science and Technology Areas:


Primary: Experimental Technologies: Sensors, Measuring Systems
Secondary: Nuclear Safety


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