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Low temperature Technology of SiC

#0603


Development of the Low Temperature Technology for Producing Semiconductor Devices on Base of Silicon Carbide

Tech Area / Field

  • MAT-ELE/Organic and Electronics Materials/Materials

Status
3 Approved without Funding

Registration date
04.04.1996

Leading Institute
Kurchatov Research Center / Institute of Nuclear Reactors, Russia, Moscow

Supporting institutes

  • Tbilisi State University, Georgia, Tbilisi

Project summary

Field effect transistors, diodes and other electronic parts on a base of SiC possess a number of advantages in comparison to analog silicon electronic parts. Among the advantages are: possible operation at temperatures up to 600° C, high frequency operation, very high radiation resistance, excellent physical stability and chemical inertness. SiC electronic parts, including in perspective integrated circuits, are widely used in both scientific and commercial application on Earth and in space.

There is, however, one difficulty of SiC electronic parts development and their commercial production: the very high temperature (up to 2000° C) needed for the basic technological operations including doping and oxidation. This has necessitated the development the new expensive equipment. If it is possible to decrease the temperature necessary for the production SiC electronic parts, that would reduce costs, and have great commercial applicability.

The principal possibility for decreasing the temperature needed for processes such as dopant diffusion, annealing the structural damage caused by ion implantation, growing of the self-oxide layers on the semiconductor surface, or formation of the ohmic contacts to the device's structures, is based on a new concept concerning the mechanism of atomic migration in condensed media.

This new concept gives a unified explanation of the movement of atom which occurs in solids, and the interaction between atoms. The concept has been experimentally confirmed for such phenomenona as the thermal expansion, photomechanical effect, internal friction and viscosity, defect formation and migration, ion emission, melting and recrystallization. But the development of the low temperature technology for the GaAS field effect transistors (FET) and GaAs simple microcircuits is the brightest experimental confirmation of the new concept. The highest temperature inside the technological cycle of the production these electronic parts doesn't exceed 150° C. And the concept has become the basis for growing high quality self-oxide layers on GaAs crystals for gate dielectric and surface passivation.

Preliminary investigations have shown a strong possibility for reducing the temperatures needed for fabrication of the SiC device's fabrication. But the main aim of the project, fabrication the SiC JFET's, MOSFET's and MESFET's can be accomplished of the investigating problems regarding optimization of the chips' parameters for different technological operations, and deciding on the compatibility of these operation.

Potential Role of Foreign Collaborators

Such potential foreign collaborators as Sandia Nat. Lab., Philips Lab., and Westinghouse can promote the success of the project and accelerate the project job if they will help by ensuring a steady supply of high quality SiC wafers. In spite of this agreement other scientific institutions and industrial companies of the USA & Canada, West Europe & Japan are invited for joint activities in research development of SiC devices in this project.


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