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Technological Excimer Lasers

#0444


Universal Eximer Laser Complex for Technological Applications.

Tech Area / Field

  • PHY-OPL/Optics and Lasers/Physics

Status
3 Approved without Funding

Registration date
07.08.1995

Leading Institute
TRINITI, Russia, Moscow reg., Troitsk

Supporting institutes

  • VNIIEF, Russia, N. Novgorod reg., Sarov\nRussian Academy of Sciences / Institute of Crystallography, Russia, Moscow

Collaborators

  • Lambda Physik GmbH, Germany, Göttingen

Project summary

The goal of the project is the creation of the excimer laser complex with the possibility of change its main laser parameters in wide range and its adaptation for using in various technologies. Combinations of the laser parameters which can berealized by single laser module with average radiation power 500 W are shown in the Table 1.

Table 1

Name of combination laser parameters

Wavelength,

nm

Pulse energy,

J

Pulse repetition rate,

Hz

308-10-50

308

10

50

308-5-100

308

5

100

308-2-250

308

2

250

248-2-250

248

2

250

308-1-500

308

1

500

248-1-500

248

1

500

193-1-500

193

1

500

The required laser parameters combination can be obtained by means of the comparatively simple changes in electrode ensemble and the electrical circuit of the pulse feeding, just as the main elements of the laser module (gas flow loop, heat exchanger, high voltage power supply, gas feeding system) remain constant and defined mainly by the total average laser radiation power «500W. Principally it is possible to increase an average laser power up to 1-2 kW by increasing of the gas velocity in the module and by using two module tandem structure. So, peculiar feature of the our approach is that proposed laser complex will allow to choose optimal laser parameters combinations for different application and this combination can be changed at potential users request.

The reliable complex operation, that we are going to achieve, flexibility in the choice of the main laser parameters, will allow both as to accelerate the inculcation the known laser technologies in the wide production and to use the laser complex for the investigation of the new effective applications. In the frame of ibis Project we intend to demonstrate effective application of the excimer complex for cleaning of the surfaces exposed to the radioactive pollution and crystallization of amorphous silicon films of large sizes (300x400 mm) for development of the technology of the flat liquid crystals displays. Amorphous silicon films will be crystallized by 1-dimensionally scanning a line shape excimer laser beam that basically reduces the nonuniformity of polycrystalline Silicone Thin Transistor (poly - Si TFT) film.

The work being proposed is based on many years experience of the participants of the creation, exploitation and application of the various excimer lasers, including XeCl laser created at TRINITI in 1990 for the first time in the world with the average power 1 kW.

The authors of this project will be thankful to all potential foreign collaborators, if they would like to pay attention to the project and if they could particularly indicate the laser parameters combinations to be optimal for advanced technology applications, which they develop.

The authors shall be grateful for any remarks, ideas and help which make results of our project more attractable for subsequent using and for the commerce.


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